作者： Xiao, Zhengguo;Bi, Cheng;Shao, Yuchuan;Dong, Qingfeng;Wang, Qi;Yuan, Yongbo;Wang, Chenggong;Gao, Yongli;Huang, Jinsong*

期刊： Energy and Environmental Science,2014年7(8):2619-2623 ISSN：1754-5692

通讯作者： Huang, Jinsong

作者机构： [Bi, Cheng; Yuan, Yongbo; Wang, Qi; Huang, Jinsong; Dong, Qingfeng; Shao, Yuchuan; Xiao, Zhengguo] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.;[Gao, Yongli; Wang, Chenggong] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.;[Gao, Yongli] Cent S Univ, ISUPM, Changsha 410083, Peoples R China.

通讯机构： [Huang, Jinsong] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.

摘要： We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 °C) solution process. A high efficiency of 15.4%, with a fill factor of ∼80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices. This journal is ©the Partner Organisations 2014.

语种： 英文

作者： Wei, Haotong;Fang, Yanjun;Mulligan, Padhraic;Chuirazzi, William;Fang, Hong-Hua;Wang, Congcong;Ecker, Benjamin R.;Gao, Yongli;Loi, Maria Antonietta;Cao, Lei*;Huang, Jinsong*

期刊： Nature Photonics,2016年10(5):333-339 ISSN：1749-4885

通讯作者： Huang, Jinsong;Cao, Lei

作者机构： [Wei, Haotong; Fang, Yanjun; Huang, Jinsong] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.;[Fang, Yanjun; Mulligan, Padhraic; Cao, Lei] Ohio State Univ, Dept Mech & Aerosp Engn, Nucl Engn Program, Columbus, OH 43210 USA.;[Fang, Hong-Hua; Loi, Maria Antonietta] Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands.;[Gao, Yongli; Wang, Congcong; Ecker, Benjamin R.] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.;[Gao, Yongli] Cent S Univ, ISUPAM, Changsha 410083, Hunan, Peoples R China.

通讯机构： [Huang, Jinsong] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.;[Cao, Lei] Ohio State Univ, Dept Mech & Aerosp Engn, Nucl Engn Program, Columbus, OH 43210 USA.

摘要： The large mobilities and carrier lifetimes of hybrid perovskite single crystals and the high atomic numbers of Pb, I and Br make them ideal for X-ray and gamma-ray detection. Here, we report a sensitive X-ray detector made of methylammonium lead bromide perovskite single crystals. A record-high mobility-lifetime product of 1.2 ×10 -2 €...cm 2 €...V -1 and an extremely small surface charge recombination velocity of 64 €...cm €...s -1 are realized by reducing the bulk defects and passivating surface traps. Single-crystal devices with a thickness of 2-3 €...mm show 16.4% detection efficiency at near zero bias under irradiation with continuum X-ray energy up to 50 €...keV. The lowest detectable X-ray dose rate is 0.5 €...μGy air €...s -1 with a sensitivity of 80 €...μC €...Gy 1 air €...cm -2, which is four times higher than the sensitivity achieved with α-Se X-ray detectors. This allows the radiation dose applied to a human body to be reduced for many medical and security check applications. ©2016 Macmillan Publishers Limited. All rights reserved.

语种： 英文

作者： Hong, Guosong;Zou, Yingping*;Antaris, Alexander L.;Diao, Shuo;Wu, Di;Cheng, Kai;Zhang, Xiaodong;Chen, Changxin;Liu, Bo;He, Yuehui;Wu, Justin Z.;Yuan, Jun;Zhang, Bo;Tao, Zhimin;Fukunaga, Chihiro;Dai, Hongjie

期刊： Nature Communications,2014年5:4206 ISSN：2041-1723

通讯作者： Zou, Yingping

作者机构： [Chen, Changxin; Antaris, Alexander L.; Tao, Zhimin; Hong, Guosong; Wu, Di; Diao, Shuo; Wu, Justin Z.; Dai, Hongjie; Zhang, Xiaodong; Fukunaga, Chihiro; Zhang, Bo] Stanford Univ, Dept Chem, Stanford, CA 94305 USA.;[Yuan, Jun; Liu, Bo; Zou, Yingping] Cent S Univ, Coll Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China.;[He, Yuehui; Liu, Bo; Zou, Yingping] Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China.;[Zou, Yingping] Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.;[Cheng, Kai] Stanford Univ, Sch Med, Dept Radiol, Stanford, CA 94305 USA.

通讯机构： [Zou, Yingping] Cent S Univ, Coll Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China.

摘要： In vivo fluorescence imaging in the second near-infrared window (1.0-1.7 μm) can afford deep tissue penetration and high spatial resolution, owing to the reduced scattering of long-wavelength photons. Here we synthesize a series of low-bandgap donor/acceptor copolymers with tunable emission wavelengths of 1,050-1,350 nm in this window. Non-covalent functionalization with phospholipid-polyethylene glycol results in water-soluble and biocompatible polymeric nanoparticles, allowing for live cell molecular imaging at >1,000 nm with polymer fluorophores for the first time. Importantly, the high quantum yield of the polymer allows for in vivo, deep-tissue and ultrafast imaging of mouse arterial blood flow with an unprecedented frame rate of >25 frames per second. The high time-resolution results in spatially and time resolved imaging of the blood flow pattern in cardiogram waveform over a single cardiac cycle (∼200 ms) of a mouse, which has not been observed with fluorescence imaging in this window before. © 2014 Macmillan Publishers Limited.

语种： 英文

作者： Huang, Jinsong*;Yuan, Yongbo;Shao, Yuchuan;Yan, Yanfa

期刊： Nature Reviews Materials,2017年2(7):17042 ISSN：2058-8437

通讯作者： Huang, Jinsong

作者机构： [Yuan, Yongbo; Huang, Jinsong; Shao, Yuchuan] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.;[Huang, Jinsong] Univ N Carolina, Dept Appl Phys Sci, Chapel Hill, NC 27599 USA.;[Yuan, Yongbo] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China.;[Yan, Yanfa] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA.;[Yan, Yanfa] Univ Toledo, Wright Ctr Photovolta Innovat & Commercializat, Toledo, OH 43606 USA.

通讯机构： [Huang, Jinsong] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.

摘要： New photovoltaic materials have been searched for in the past decades for clean and renewable solar energy conversion with an objective of reducing the levelized cost of electricity (that is, the unit price of electricity over the course of the device lifetime). An emerging family of semiconductor materials-organic-inorganic halide perovskites (OIHPs)-are the focus of the photovoltaic research community owing to their use of low cost, nature-abundant raw materials, low-temperature and scalable solution fabrication processes, and, in particular, the very high power conversion efficiencies that have been achieved within the short time of their development. In this Review, we summarize and critically assess the most recent advances in understanding the physical properties of both 3D and low-dimensional OIHPs that favour a small open-circuit voltage deficit and high power conversion efficiency. Several prominent topics in this field on the unique properties of OIHPs are surveyed, including defect physics, ferroelectricity, exciton dissociation processes, carrier recombination lifetime and photon recycling. The impact of ion migration on solar cell efficiency and stability are also critically analysed. Finally, we discuss the remaining challenges in the commercialization of OIHP photovoltaics. © 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.

语种： 英文

作者： Cinchetti, Mirko*;Heimer, Kathrin;Wuestenberg, Jan-Peter;Andreyev, Oleksiy;Bauer, Michael;Lach, Stefan;Ziegler, Christiane;Gao, Yongli;Aeschlimann, Martin

期刊： Nature Materials,2009年8(2):115-119 ISSN：1476-1122

通讯作者： Cinchetti, Mirko

作者机构： [Lach, Stefan; Heimer, Kathrin; Wuestenberg, Jan-Peter; Aeschlimann, Martin; Ziegler, Christiane; Cinchetti, Mirko] Univ Kaiserslautern, Dept Phys, D-67663 Kaiserslautern, Germany.;[Lach, Stefan; Heimer, Kathrin; Wuestenberg, Jan-Peter; Aeschlimann, Martin; Ziegler, Christiane; Cinchetti, Mirko] Univ Kaiserslautern, Res Ctr OPTIMAS, D-67663 Kaiserslautern, Germany.;[Andreyev, Oleksiy; Bauer, Michael] Univ Kiel, Inst Expt & Angew Phys, D-24118 Kiel, Germany.;[Gao, Yongli] Cent S Univ, Dept Phys, Changsha 410083, Peoples R China.;[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.

通讯机构： [Cinchetti, Mirko] Univ Kaiserslautern, Dept Phys, D-67663 Kaiserslautern, Germany.

摘要： A fundamental prerequisite for the implementation of organic semiconductors (OSCs) in spintronics devices is the still missing basic knowledge about spin injection and transport in OSCs. Here, we consider a model system consisting of a high-quality interface between the ferromagnet cobalt and the OSC copper phthalocyanine (CuPc). We focus on interfacial effects on spin injection and on the spin transport properties of CuPc. Using spin-resolved two-photon photoemission, we have measured directly and in situ the efficiency of spin injection at the cobalt-CuPc interface. We report a spin injection efficiency of 85-90% for injection into unoccupied molecular orbitals of CuPc. Moreover, we estimate an electron inelastic mean free path in CuPc in the range of 1 nm and a 10-30 times higher quasi-elastic spin-flip length. We demonstrate that quasi-elastic spin-flip processes with energy loss &le200 meV are the dominant microscopic mechanism limiting the spin diffusion length in CuPc. ©2009 Macmillan Publishers Limited. All rights reserved.

语种： 英文

作者： Wang, Qi;Shao, Yuchuan;Xie, Haipeng;Lyu, Lu;Liu, Xiaoliang;Gao, Yongli;Huang, Jinsong*

期刊： Applied Physics Letters,2014年105(16) ISSN：0003-6951

通讯作者： Huang, Jinsong

作者机构： [Wang, Qi; Huang, Jinsong; Shao, Yuchuan] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.;[Wang, Qi; Huang, Jinsong; Shao, Yuchuan] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA.;[Xie, Haipeng; Lyu, Lu; Liu, Xiaoliang] Cent S Univ, Coll Phys & Elect, Hunan Key Lab Supermicrostruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China.;[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.

通讯机构： [Huang, Jinsong] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.

摘要： We report the observation of self-doping in perovskite. CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> was found to be either n- or p-doped by changing the ratio of methylammonium halide (MAI) and lead iodine (PbI<inf>2</inf>) which are the two precursors for perovskite formation. MAI-rich and PbI<inf>2</inf>-rich perovskite films are p and n self-doped, respectively. Thermal annealing can convert the p-type perovskite to n-type by removing MAI. The carrier concentration varied as much as six orders of magnitude. A clear correlation between doping level and device performance was also observed. &copy;2014 AIP Publishing LLC.

语种： 英文

作者： Huang, Han*;Wei, Dacheng;Sun, Jiatao;Wong, Swee Liang;Feng, Yuan Ping;Castro Neto, A. H.;Wee, Andrew Thye Shen

期刊： Scientific Reports,2012年2:983 ISSN：2045-2322

通讯作者： Huang, Han

作者机构： [Castro Neto, A. H.; Wee, Andrew Thye Shen; Huang, Han; Wong, Swee Liang; Feng, Yuan Ping; Wei, Dacheng] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore.;[Castro Neto, A. H.; Wee, Andrew Thye Shen; Huang, Han] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore.;[Huang, Han] Cent S Univ, Inst Super Microstruct & Ultrafast Proc, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.;[Sun, Jiatao] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore.;[Wee, Andrew Thye Shen; Wong, Swee Liang] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore.

通讯机构： [Huang, Han] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore.

摘要： Graphene has attracted much interest in both academia and industry. The challenge of making it semiconducting is crucial for applications in electronic devices. A promising approach is to reduce its physical size down to the nanometer scale. Here, we present the surface-assisted bottom-up fabrication of atomically precise armchair graphene nanoribbons (AGNRs) with predefined widths, namely 7-, 14- and 21-AGNRs, on Ag(111) as well as their spatially resolved width-dependent electronic structures. STM/STS measurements reveal their associated electron scattering patterns and the energy gaps over 1 eV. The mechanism to form such AGNRs is addressed based on the observed intermediate products. Our results provide new insights into the local properties of AGNRs, and have implications for the understanding of their electrical properties and potential applications.

语种： 英文

作者： Li, Xue-Yong;Li, Hong-Jian*;Wang, Zhi-Jun;Xia, Hui;Xiong, Zhi-Yong;Wang, Jun-Xi;Yang, Bing-Chu

期刊： Optics Communications,2009年282(2):247-252 ISSN：0030-4018

通讯作者： Li, Hong-Jian

作者机构： [Li, Xue-Yong; Yang, Bing-Chu; Xiong, Zhi-Yong; Wang, Jun-Xi; Li, Hong-Jian; Wang, Zhi-Jun; Xia, Hui] Cent S Univ, Coll Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China.;[Li, Xue-Yong; Li, Hong-Jian] Cent S Univ, Sch Mat Sci & Engn, Changsha 410083, Hunan, Peoples R China.;[Li, Xue-Yong] Hunan Univ Technol, Sch Sci, Zhuzhou 412008, Peoples R China.;[Li, Hong-Jian] Cent S Univ, Coll Phys Sci & Technol, Lusan Lu 8, Changsha 410083, Hunan, Peoples R China.

通讯机构： [Li, Hong-Jian] Cent S Univ, Coll Phys Sci & Technol, Lusan Lu 8, Changsha 410083, Hunan, Peoples R China.

关键词： 71.55.Gs;61.72.Vv;73.40.Lq;Al-doped ZnO;dc Magnetron sputtering;Microstructure;Optical properties

摘要： ZnO and Al-doped ZnO(ZAO) thin films have been prepared on glass substrates by direct current (dc) magnetron sputtering from 99.99% pure Zn metallic and ZnO:3 wt%Al<inf>2</inf>O<inf>3</inf>ceramic targets, the effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. It shows that the surface morphologies of ZAO films exhibit difference from that of ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (0 0 2). The optical transmittance and photoluminescence (PL) spectra of both ZnO and ZAO films are obviously influenced by the substrate temperature. All films exhibit a transmittance higher than 86% in the visible region, while the optical transmittance of ZAO films is slightly smaller than that of ZnO films. More significantly, Al-doping leads to a larger optical band gap (E<inf>g</inf>) of the films. It is found from the PL measurement that near-band-edge (NBE) emission and deep-level (DL) emission are observed in pure ZnO thin films. However, when Al was doped into thin films, the DL emission of the thin films is depressed. As the substrate temperature increases, the peak of NBE emission has a blueshift to region of higher photon energy, which shows a trend similar to the E<inf>g</inf>in optical transmittance measurement. &copy;2008 Elsevier B.V. All rights reserved.

语种： 英文

作者： Lu, Guangyuan;Wu, Tianru;Yuan, Qinghong;Wang, Huishan;Wang, Haomin;Ding, Feng;Xie, Xiaoming*;Jiang, Mianheng

期刊： Nature Communications,2015年6:6160 ISSN：2041-1723

通讯作者： Xie, Xiaoming

作者机构： [Wang, Huishan; Wang, Haomin; Jiang, Mianheng; Wu, Tianru; Lu, Guangyuan; Xie, Xiaoming] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.;[Yuan, Qinghong] E China Normal Univ, Dept Phys, Shanghai 200241, Peoples R China.;[Wang, Huishan] Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.;[Ding, Feng] Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China.;[Jiang, Mianheng; Xie, Xiaoming] Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China.

通讯机构： [Xie, Xiaoming] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China.

摘要： Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60permm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500μm2, approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications. © 2015 Macmillan Publishers Limited. All rights reserved.

语种： 英文

作者： Zhou, Lin;Xu, Kai;Zubair, Ahmad;Liao, Albert D.;Fang, Wenjing;Ouyang, Fangping;Lee, Yi-Hsien;Ueno, Keiji;Saito, Riichiro;Palacios, Tomas;Kong, Jing*;Dresselhaus, Mildred S.

期刊： Journal of the American Chemical Society,2015年137(37):11892-11895 ISSN：0002-7863

通讯作者： Kong, Jing

作者机构： [Liao, Albert D.; Fang, Wenjing; Xu, Kai; Palacios, Tomas; Zhou, Lin; Dresselhaus, Mildred S.; Kong, Jing; Zubair, Ahmad; Ouyang, Fangping] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA.;[Xu, Kai] China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249, Peoples R China.;[Ouyang, Fangping] Cent S Univ, State Key Lab Powder Met, Sch Phys & Elect, Changsha 410083, Peoples R China.;[Lee, Yi-Hsien] Natl Tsing Hua Univ, Mat Sci & Engn, Hsinchu 30013, Taiwan.;[Ueno, Keiji] Saitama Univ, Grad Sch Sci & Engn, Dept Chem, Saitama 3388570, Japan.

通讯机构： [Kong, Jing] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA.

摘要： The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe&lt;inf&gt;2&lt;/inf&gt;) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T&prime;MoTe&lt;inf&gt;2&lt;/inf&gt;films. It was found that these two different phases of MoTe&lt;inf&gt;2&lt;/inf&gt;can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe&lt;inf&gt;2&lt;/inf&gt;films display electronic properties that are comparable to those of mechanically exfoliated MoTe&lt;inf&gt;2&lt;/inf&gt;flakes. Our growth method paves the way for the large-scale application of MoTe&lt;inf&gt;2&lt;/inf&gt;in high-performance nanoelectronics and optoelectronics. &copy;2015 American Chemical Society.

语种： 英文

作者： Yang, Bo;Wang, Liang;Han, Jun;Zhou, Ying;Song, Huaibing;Chen, Shiyou*;Zhong, Jie;Lv, Lu;Niu, Dongmei;Tang, Jiang

期刊： Chemistry of Materials,2014年26(10):3135-3143 ISSN：0897-4756

通讯作者： Chen, Shiyou

作者机构： [Tang, Jiang; Zhong, Jie; Song, Huaibing; Yang, Bo; Han, Jun; Wang, Liang; Zhou, Ying] HUST, WNLO, Wuhan 430074, Peoples R China.;[Tang, Jiang; Zhong, Jie; Song, Huaibing; Yang, Bo; Han, Jun; Wang, Liang; Zhou, Ying] HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.;[Chen, Shiyou] E China Normal Univ, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China.;[Chen, Shiyou] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.;[Lv, Lu; Niu, Dongmei] Cent S Univ, Sch Phys & Elect, Inst Supermicrostruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.

通讯机构： [Chen, Shiyou] E China Normal Univ, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China.

摘要： Recently, CuSbS<inf>2</inf>has been proposed as an alternative earth-abundant absorber material for thin film solar cells. However, no systematic study on the chemical, optical, and electrical properties of CuSbS<inf>2</inf>has been reported. Using density functional theory (DFT) calculations, we showed that CuSbS<inf>2</inf>has superior defect physics with extremely low concentration of recombination-center defects within the forbidden gap, espeically under the S rich condition. It has intrinsically p-type conductivity, which is determined by the dominant Cu vacancy (V<inf>Cu</inf>) defects with the a shallow ionization level and the lowest formation energy. Using a hydrazine based solution process, phase-pure, highly crystalline CuSbS<inf>2</inf>film with large grain size was successfully obtained. Optical absorption investigation revealed that our CuSbS<inf>2</inf>has a direct band gap of 1.4 eV. Ultraviolet photoelectron spectroscopy (UPS) study showed that the conduction band and valence band are located at 3.85 eV and -5.25 eV relative to the vacuum level, respectively. As the calculations predicted, a p-type conductivity is observed in the Hall effect measurements with a hole concentration of &sim;10¹⁸cm^-3and hole mobility of 49 cm²/(V s). Finally, we have built a prototype FTO/CuSbS<inf>2</inf>/CdS/ZnO/ZnO:Al/Au solar cell and achieved 0.50% solar conversion efficiency. Our theoretical and experimental investigation confirmed that CuSbS<inf>2</inf>is indeed a very promising absorber material for solar cell application. &copy;2014 American Chemical Society.<br/>

语种： 英文

作者： Mu, Haoran;Lin, Shenghuang;Wang, Zhongchi;Xiao, Si;Li, Pengfei;Chen, Yao;Zhang, Han;Bao, Haifeng;Lau, Shu Ping;Pan, Chunxu;Fan, Dianyuan;Bao, Qiaoliang*

期刊： Advanced Optical Materials,2015年3(10):1447-1453 ISSN：2195-1071

通讯作者： Bao, Qiaoliang

作者机构： [Bao, Qiaoliang; Lin, Shenghuang; Mu, Haoran; Li, Pengfei; Chen, Yao] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China.;[Lin, Shenghuang; Lau, Shu Ping] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Hong Kong, Peoples R China.;[Wang, Zhongchi; Pan, Chunxu] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China.;[Xiao, Si] Cent S Univ, Hunan Key Lab Super Microstruct & Ultrafast Proc, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Peoples R China.;[Fan, Dianyuan; Zhang, Han] Shenzhen Univ, Minist Educ & Guangdong Prov, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China.

通讯机构： [Bao, Qiaoliang] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China.

关键词： Black phosphorus;Electrospinning;Polymer composites;Pulsed lasers;Saturable absorbers

摘要： Black phosphorus (BP) is a very promising material for telecommunication due to its direct bandgap and strong resonant absorption in near-infrared wavelength range. However, ultrafast nonlinear photonic applications relying on the ultrafast photocarrier dynamics as well as optical nonlinearity in black phosphorus remain unexplored. In this work, nonlinear optical properties of solution exfoliated BP are investigated and the usage of BP as a new saturable absorber for high energy pulse generation in fiber laser is demonstrated. In order to avoid the oxidization and degradation, BP is encapsulated by polymer matrix which is optically transparent in the spectrum range of interest to form a composite. Two fabrication approaches are demonstrated to produce BP-polymer composite films which are further incorporated into fiber laser cavity as nonlinear media. BP shows very fast carrier dynamics and BP-polymer composite has a modulation depth of 10.6%. A highly stable Q-switched pulse generation is achieved and the single pulse energy of 194 nJ is demonstrated. The ease of handling of such black phosphorus-polymer composite thin films affords new opportunities for wider applications such as optical sensing, signal processing, and light modulation.<br/> &copy;2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

语种： 英文

作者： Yang, Junliang*;Yan, Donghang;Jones, Tim S.

期刊： Chemical Reviews,2015年115(11):5570-5603 ISSN：0009-2665

通讯作者： Yang, Junliang

作者机构： [Yang, Junliang] Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.;[Yang, Junliang] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China.;[Yan, Donghang] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Jilin, Peoples R China.;[Jones, Tim S.] Univ Warwick, Dept Chem, Coventry CV4 7AL, W Midlands, England.

通讯机构： [Yang, Junliang] Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.

摘要： Molecular template growth (MTG) is a newly developed method for fabricating high-quality organic semiconductor thin films with controllable morphologies, molecular orientations, electronic structures, and interface properties to produce high-performance organic electronic and optoelectronic devices. There are several MTG methods with different molecular template materials and growth behaviors, including multiphenyl- and multithiophene-based MTG, and perylene-derivative MTG. Extensive research works have also revealed that Individualized methods for fabricating high-quality organic semiconductor thin films with controllable thin-film properties can be developed on the basis of specific understandings of the growth behaviors of organic semiconductor molecules and the desired device structures.

语种： 英文

作者： Lin, Jia Dan;Han, Cheng;Wang, Fei;Wang, Rui;Xiang, Du;Qin, Shiqiao;Zhang, Xue-Ao*;Wang, Li;Zhang, Hua;Wee, Andrew Thye Shen;Chen, Wei

期刊： ACS Nano,2014年8(5):5323-5329 ISSN：1936-0851

通讯作者： Zhang, Xue-Ao

作者机构： [Wang, Fei; Qin, Shiqiao; Han, Cheng; Lin, Jia Dan; Zhang, Xue-Ao] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.;[Chen, Wei; Han, Cheng; Wee, Andrew Thye Shen; Lin, Jia Dan; Xiang, Du; Wang, Rui] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore.;[Wang, Fei] Cent S Univ, Coll Phys & Elect, Changsha 410073, Hunan, Peoples R China.;[Wang, Li] Nanchang Univ, Inst Adv Study, Nanchang, Peoples R China.;[Wang, Li] Nanchang Univ, Dept Phys, Nanchang, Peoples R China.

通讯机构： [Zhang, Xue-Ao] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.

关键词： MoS2;FET;n-type doping;Cs2CO3;photoluminescence;Raman;photocurrent

摘要： We report effective and stable electron doping of monolayer molybdenum disulfide (MoS<inf>2</inf>) by cesium carbonate (Cs<inf>2</inf>CO<inf>3</inf>) surface functionalization. The electron charge carrier concentration in exfoliated monolayer MoS<inf>2</inf> can be increased by about 9 times after Cs<inf>2</inf>CO<inf>3</inf> functionalization. The n-type doping effect was evaluated by in situ transport measurements of MoS<inf>2</inf> field-effect transistors (FETs) and further corroborated by in situ ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering measurements. The electron doping enhances the formation of negative trions (i.e., a quasiparticle comprising two electrons and one hole) in monolayer MoS<inf>2</inf> under light irradiation and significantly reduces the charge recombination of photoexcited electron-hole pairs. This results in large photoluminescence suppression and an obvious photocurrent enhancement in monolayer MoS<inf>2</inf> FETs. &copy;2014 American Chemical Society.

语种： 英文

作者： Wang, Shiliang;Huang, Xiaolin;He, Yuehui*;Huang, Han;Wu, Yueqin;Hou, Lizhen;Liu, Xinli;Yang, Taimin;Zou, Jin;Huang, Baiyun

期刊： Carbon,2012年50(6):2119-2125 ISSN：0008-6223

通讯作者： He, Yuehui

作者机构： [Yang, Taimin; Liu, Xinli; Wang, Shiliang; Huang, Baiyun; He, Yuehui; Huang, Han; Huang, Xiaolin] Cent S Univ, State Key Lab Powder Met, Sch Phys Sci & Technol, Changsha 410083, Peoples R China.;[Wang, Shiliang; Wu, Yueqin; Zou, Jin] Univ Queensland, Ctr Microscopy & Microanal, Sch Mech & Min Engn, Brisbane, Qld 4072, Australia.;[Hou, Lizhen] Hunan Normal Univ, Inst Phys & Informat Sci, Changsha 410081, Hunan, Peoples R China.

通讯机构： [He, Yuehui] Cent S Univ, State Key Lab Powder Met, Sch Phys Sci & Technol, Changsha 410083, Peoples R China.

摘要： Copper nanoparticles encapsulated by multi-layer graphene have been produced in large quantity (in grams) by metal-organic chemical vapor deposition at 600 degrees C with copper(II) acetylacetonate powders as precursor. The obtained graphene/copper shell/core nanoparticles were found to be formed by a novel coalescence mechanism that is quite different from the well-known dissolution-precipitation mechanism for some other graphene/metal (such as nickel, iron or cobalt) shell/core nanoparticles. Differential scanning calorimetry and thermogravimetric analyses showed that the copper nanoparticles encapsulated by multi-layer graphene with a thickness of 1-2 nm were thermally stable up to 165 degrees C in air atmosphere. Moreover, high-resolution transmission electron microscopy showed that the single-crystal copper nanoparticles, after exposure to air for 60 days, did not exhibit any sign of oxidation. (C) 2012 Elsevier Ltd. All rights reserved.

语种： 英文

作者： Ouyang, Fangping;Peng, Shenglin;Liu, Zhongfan*;Liu, Zhirong

期刊： ACS Nano,2011年5(5):4023-4030 ISSN：1936-0851

通讯作者： Liu, Zhongfan

作者机构： [Liu, Zhongfan; Liu, Zhirong; Ouyang, Fangping] Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China.;[Liu, Zhongfan; Liu, Zhirong; Ouyang, Fangping] Peking Univ, BNLMS, Beijing 100871, Peoples R China.;[Peng, Shenglin; Ouyang, Fangping] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Peoples R China.

通讯机构： [Liu, Zhongfan] Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China.

关键词： graphene;antidot lattices;bandgap;electronic structure;first-principles calculations;tight-binding model

摘要： The electronic structure of graphene antidot lattices (GALs) with zigzag hole edges was studied with first-principles calculations. It was revealed that half of the possible GAL patterns were unintentionally missed in the usual construction models used in earlier studies. With the complete models, the bandgap of the GALs was sensitive to the width W of the wall between the neighboring holes. A nonzero bandgap was opened in hexagonal GALs with even W, while the bandgap remained closed in those with odd W. Similar alternating gap opening/closing with W was also demonstrated in rhombohedral GALs. Moreover, analytical solutions of single-walled GALs were derived based on a tight-binding model to determine the location of the Dirac points and the energy dispersion, which confirmed the unique effect in GALs.

语种： 英文

作者： Li, Yongbo;Yi, Ran;Yan, Aiguo;Deng, Lianwen;Zhou, Kechao;Liu, Xiaohe*

期刊： Solid State Sciences,2009年11(8):1319-1324 ISSN：1293-2558

通讯作者： Liu, Xiaohe

作者机构： [Li, Yongbo; Yan, Aiguo; Yi, Ran; Liu, Xiaohe] Cent S Univ, Dept Inorgan Mat, Changsha 410083, Hunan, Peoples R China.;[Deng, Lianwen] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China.;[Zhou, Kechao; Liu, Xiaohe] Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China.

通讯机构： [Liu, Xiaohe] Cent S Univ, Dept Inorgan Mat, Changsha 410083, Hunan, Peoples R China.

关键词： Composite materials;Core-shell structure;Chemical synthesis;Properties

摘要： We demonstrated that ZnFe<inf>2</inf>O<inf>4</inf>/polypyrrole core-shell nanoparticles could be facilely synthesized via in situ chemical oxidative polymerization of pyrrole monomers on the surface of ZnFe<inf>2</inf>O<inf>4</inf> nanoparticles. The shell thickness of core-shell nanoparticles could be easily controlled by adjusting the amount of pyrrole monomers. The phase structures, morphologies and properties of the as-prepared products were investigated by XRD, TEM, SEM, VSM, and FTIR spectra. Magnetic studies revealed that the saturation magnetization (M<inf>s</inf>) and coercivity (H<inf>c</inf>) of ZnFe<inf>2</inf>O<inf>4</inf>/PPy core-shell nanoparticles is 17.8 emu/g and 130 Oe, respectively. The electromagnetic characteristics of products showed that ZnFe<inf>2</inf>O<inf>4</inf>/PPy core-shell nanoparticles exhibit excellent microwave absorption performance than ZnFe<inf>2</inf>O<inf>4</inf> nanoparticles, such as more powerful absorbing property and wider electromagnetic wave absorbing frequency band due to the proper matching of the permittivity and the permeability of ZnFe<inf>2</inf>O<inf>4</inf>/PPy core-shell nanoparticles. &copy;2009 Elsevier Masson SAS. All rights reserved.

语种： 英文

作者： Hu, Qiao;Wu, Han;Sun, Jia;Yan, Donghang;Gao, Yongli;Yang, Junliang*

期刊： Nanoscale,2016年8(9):5350-5357 ISSN：2040-3364

通讯作者： Yang, Junliang

作者机构： [Yang, Junliang; Gao, Yongli; Wu, Han; Sun, Jia; Hu, Qiao] Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Mat, Hunan Key Lab Super Microstruct & Ultrafast Proc, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.;[Yang, Junliang; Yan, Donghang] Chinese Acad Sci, State Key Lab Polymer Phys & Chem, Changchun Inst Appl Chem, Changchun 130022, Peoples R China.;[Gao, Yongli] Univ Rochester, Dept Phys & Astron, 601 Elmwood Ave, Rochester, NY 14627 USA.

通讯机构： [Yang, Junliang] Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Mat, Hunan Key Lab Super Microstruct & Ultrafast Proc, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.;[Yang, Junliang] Chinese Acad Sci, State Key Lab Polymer Phys & Chem, Changchun Inst Appl Chem, Changchun 130022, Peoples R China.

摘要： Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf>) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility &sim;45%, temperature &sim;28 &deg;C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO<inf>2</inf>) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays with great potential applications in flexible electronic and optoelectronic devices. &copy;The Royal Society of Chemistry 2016.

语种： 英文

作者： Liu, Xinsheng;Chen, Jie;Luo, Miao;Leng, Meiying;Xia, Zhe;Zhou, Ying;Qin, Sikai;Xue, Ding-Jiang;Lv, Lu;Huang, Han;Niu, Dongmei;Tang, Jiang*

期刊： ACS Applied Materials and Interfaces,2014年6(13):10687-10695 ISSN：1944-8244

通讯作者： Tang, Jiang

作者机构： [Tang, Jiang; Xia, Zhe; Xue, Ding-Jiang; Leng, Meiying; Qin, Sikai; Liu, Xinsheng; Chen, Jie; Zhou, Ying; Luo, Miao] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Hubei, Peoples R China.;[Tang, Jiang; Xia, Zhe; Xue, Ding-Jiang; Leng, Meiying; Qin, Sikai; Liu, Xinsheng; Chen, Jie; Zhou, Ying; Luo, Miao] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China.;[Lv, Lu; Huang, Han; Niu, Dongmei] Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.

通讯机构： [Tang, Jiang] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Hubei, Peoples R China.

关键词： Sb2Se3;thermal evaporation;thin film;solar cells

摘要： Sb2Se3 is a promising absorber material for photovoltaic cells because of its optimum band gap, strong optical absorption, simple phase and composition, and earth-abundant and nontoxic constituents. However, this material is rarely explored for photovoltaic application. Here we report Sb2Se3 solar cells fabricated from thermal evaporation. The rationale to choose thermal evaporation for Sb2Se3 film deposition was first discussed, followed by detailed characterization of Sb2Se3 film deposited onto FTO with different substrate temperatures. We then studied the optical absorption, photosensitivity, and band position of Sb2Se3 film, and finally a prototype photovoltaic device FTO/Sb2Se3/CdS/ZnO/ZnO:Al/Au was constructed, achieving an encouraging 2.1% solar conversion efficiency.

语种： 英文

作者： Liu, Wenhao;Sun, Kehui*;Zhu, Congxu

期刊： Optics and Lasers in Engineering,2016年84:26-36 ISSN：0143-8166

通讯作者： Sun, Kehui

作者机构： [Sun, Kehui; Liu, Wenhao] Cent S Univ, Sch Phys & Elect, Changsha 410083, Peoples R China.;[Sun, Kehui] Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.;[Zhu, Congxu] Cent S Univ, Sch Informat Sci & Engn, Changsha 410083, Hunan, Peoples R China.

通讯机构： [Sun, Kehui] Cent S Univ, Sch Phys & Elect, Changsha 410083, Peoples R China.

关键词： Chaos;Image encryption;Close-loop modulation coupling model;Chaotic shift transform

摘要： Derived from Sine map and iterative chaotic map with infinite collapse (ICMIC), a new two-dimensional Sine ICMIC modulation map (2D-SIMM) is proposed based on a close-loop modulation coupling (CMC) model, and its chaotic performance is analyzed by means of phase diagram, Lyapunov exponent spectrum and complexity. It shows that this map has good ergodicity, hyperchaotic behavior, large maximum Lyapunov exponent and high complexity. Based on this map, a fast image encryption algorithm is proposed. In this algorithm, the confusion and diffusion processes are combined for one stage. Chaotic shift transform (CST) is proposed to efficiently change the image pixel positions, and the row and column substitutions are applied to scramble the pixel values simultaneously. The simulation and analysis results show that this algorithm has high security, low time complexity, and the abilities of resisting statistical analysis, differential, brute-force, known-plaintext and chosen-plaintext attacks. &copy;2016 Elsevier Ltd. All rights reserved.

语种： 英文