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Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

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WOS被引频次:752
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成果类型:
期刊论文
作者:
Xiao, Zhengguo;Bi, Cheng;Shao, Yuchuan;Dong, Qingfeng;Wang, Qi;Yuan, Yongbo;Wang, Chenggong;Gao, Yongli;Huang, Jinsong*
通讯作者:
Huang, Jinsong
作者机构:
[Bi, Cheng; Yuan, Yongbo; Wang, Qi; Huang, Jinsong; Dong, Qingfeng; Shao, Yuchuan; Xiao, Zhengguo] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.
[Gao, Yongli; Wang, Chenggong] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.
[Gao, Yongli] Cent S Univ, ISUPM, Changsha 410083, Peoples R China.
通讯机构:
[Huang, Jinsong] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Dept Mech & Mat Engn, Lincoln, NE 68588 USA.
语种:
英文
期刊:
Energy and Environmental Science
ISSN:
1754-5692
年:
2014
卷:
7
期:
8
页码:
2619-2623
文献类别:
WOS:Article;EI:Journal article (JA)
所属学科:
ESI学科类别:化学;WOS学科类别:Chemistry, Multidisciplinary;Energy & Fuels;Engineering, Chemical;Environmental Sciences
入藏号:
WOS:000339861800015;EI:20143017989108
机构署名:
本校为其他机构
摘要:
We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 °C) solution process. A high efficiency of 15.4%, with a fill factor of ∼80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices. This journal is ©the Partner Organisations 2014.
参考文献:
Abrusci A, 2013, NANO LETT, V13, P3124, DOI 10.1021/nl401044q
Ball JM, 2013, ENERG ENVIRON SCI, V6, P1739, DOI 10.1039/c3ee40810h
Burschka J, 2013, NATURE, V499, P316, DOI 10.1038/nature12340
Docampo P, 2013, NAT COMMUN, V4, DOI 10.1038/ncomms3761
Eperon GE, 2014, ADV FUNCT MATER, V24, P151, DOI 10.1002/adfm.201302090

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